A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency-Reference-Cited by-同舟云学术

A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency

Published:2008-11 Issue:11 Volume:50 Page:2989-2992
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Lee Yong-Sub,Lee Mun-Woo,Jeong Yoon-Ha

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. H. C. Park, G. Ahn, S. C. Jung, C. S. Park, W. S. Nah, B. Kim, and Y. Yang, High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors, In: Proceedings of 36th European Microwave Conference, Manchester, England 2006, pp. 184-187.

2. Design and implementation of an inverse class-F power amplifier with 79% efficiency by using a switch-based active device model;Aflaki;IEEE Radio Wireless Symp,2008

3. A high-frequency and high power quasi-class-E amplifier design using a finite bias feed inductor;Van;Microwave Opt Technol Lett,2007

4. Highly efficient LDMOS power amplifier base on class-E topology;Lee;Microwave Opt Technol Lett,2006

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