Highly conductive and broadband transparent Zr‐doped In2O3 as the front electrode for monolithic perovskite/silicon tandem solar cells

Abstract

AbstractPerovskite/silicon tandem solar cells show great potential for commercialization because of their high power conversion efficiency (PCE). The optical loss originated from the transparent electrode is still a challenge to further improve the PCE of perovskite/silicon tandem solar cells. Here, we developed zirconium‐doped indium oxide (IZrO), a material with low resistivity and high transmittance sputtered at room temperature. It possesses a high mobility of 29.6 cm2/(V·s), a low resistivity of 3.32 × 10−4 Ω·cm, and a low sheet resistance of 25.55 Ω·sq−1 as well as a high average transmittance of 81.55% in a broadband of 400–1200 nm. Moreover, the work function (WF = 4.33 eV) matches well with the energy level of Ag electrode and SnO2 buffer layer in the P‐I‐N type tandem device. Compared with the previous zinc‐doped indium oxide (IZO) transparent electrode device, the absolute efficiency of perovskite/silicon tandem devices based on IZrO electrode is about 0.6% higher. The champion P‐I‐N type perovskite/silicon tandem solar cells employing IZrO as the front conducts show efficiency of 28.28% (area of 0.5036 cm2).