An accurate scaling approach for small-signal modeling of high-power HBT devices
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Investigation of thermal stability in multifinger GaInP/GaAs collector-up tunneling-Collector HBTs with subtransistor via-holestructure;Tanaka;IEEE Trans Electron Devices,2006
2. Efficient and systematic extraction method for accurate determination of HBT temperature-dependent DC model parameters;Bousnina;Microwave Opt Technol Lett,2006
3. GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application;Asbeck;IEEE Trans Electron Devices,1989
4. Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model;Snowden;IEEE Trans Microwave Theory Tech,1997
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1. Analytical method for deriving consistent large-small-signal field-effect transistor model;Microwave and Optical Technology Letters;2013-03-23
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