P‐1.4: Oxygen‐Plasma Induced Generation of Mobile Charge Carriers in Indium‐Tin‐Zinc Oxide

Author:

Xie Xinying12,Chen Kaiqi12,Zhou Zhichao12,Jiang Wei12,Wang Yuqi12,Wang Sisi12,Xia Zhihe12,Wong Man123

Affiliation:

1. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology China

2. The State Key Laboratory on Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Kowloon Hong Kong

3. The Hong Kong University of Science and Technology Shenzhen Research Institute Shenzhen China 518057

Abstract

Mobile charge carriers can be generated in indium‐tinzinc oxide (ITZO) covered with a silicon oxide layer when subjected to an oxygen plasma treatment. The resulting ‍resistivity is sensitive to the thickness of the cover oxide, the plasma excitation power, and the treatment time. With 280 ‍nm of cover oxide and 10 mins of treatment, a low resistivity of 1.2 mΩ∙cm can be obtained in a plasma biased ‍with a radio frequency excitation power of 100 W and an inductively coupled plasma excitation power of 2000 W. ‍The treatment has been deployed to form the source/drain regions of a self‐aligned, top‐gate ITZO thin‐film ‍transistor.

Publisher

Wiley

Subject

General Medicine

Reference7 articles.

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