Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory-Reference-Cited by-同舟云学术

Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory

Published:2018-10-17 Issue:1 Volume:4 Page:1800238
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Ren Yanyun¹,Ma Hanlu¹²,Wang Wei¹,Wang Zhongqiang¹,Xu Haiyang¹,Zhao Xiaoning¹,Liu Weizhen¹,Ma Jiangang¹,Liu Yichun¹

Affiliation:

1. Centre for Advanced Optoelectronic Functional Materials Research; Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University); Ministry of Education; 5268 Renmin Street Changchun 130000 China

2. Department of Architectural Engineering; Qingdao Huanghai University; 1145 Linghai Road, The West Coast New Area Qingdao 266427 China

Funder

National Natural Science Foundation of China

People's Government of Jilin Province

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admt.201800238/fullpdf

Reference40 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Resistive Random Access Memory for Future Information Processing System

3. Improved performance of Ta2O5−x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

4. Metal–Oxide RRAM

5. Physical origin of the resistance drift exponent in amorphous phase change materials

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