Electrically Tunable Integrated Thin‐Film Magnetoelectric Resonators-Reference-Cited by-同舟云学术

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Electrically Tunable Integrated Thin‐Film Magnetoelectric Resonators

Published:2017-06-14 Issue:8 Volume:2 Page:1700062
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

El‐Ghazaly Amal¹^ORCID,Evans Joseph T.²,Sato Noriyuki¹,Montross Naomi²,Ohldag Hendrik³,White Robert M.⁴,Wang Shan X.¹⁴

Affiliation:

1. Electrical Engineering Stanford University Stanford CA 94305 USA

2. Radiant Technologies, Inc. Albuquerque NM 87107 USA

3. Stanford Synchrotron Radiation Laboratory SLAC Menlo Park CA 94025 USA

4. Materials Science and Engineering Stanford University Stanford CA 94305 USA

Funder

U.S. Department of Defense

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.201700062

Reference35 articles.

1. A one-cent room-temperature magnetoelectric sensor

2. Giant sharp and persistent converse magnetoelectric effects in multiferroic epitaxial heterostructures

3. Giant magnetoelectric coefficients in (Fe90Co10)78Si12B10-AlN thin film composites

4. Towards a magnetoelectric memory

5. Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

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