Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching-Reference-Cited by-同舟云学术

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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Published:2019-12-03 Issue:1 Volume:5 Page:1900607
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Mikhaylov Alexey¹^ORCID,Belov Alexey¹,Korolev Dmitry¹,Antonov Ivan¹,Kotomina Valentina¹,Kotina Alina¹,Gryaznov Evgeny¹,Sharapov Alexander¹,Koryazhkina Maria¹,Kryukov Ruslan¹,Zubkov Sergey¹,Sushkov Artem¹,Pavlov Dmitry¹,Tikhov Stanislav¹,Morozov Oleg¹,Tetelbaum David¹

Affiliation:

1. Lobachevsky University 23/3 Gagarin Prospect Nizhny Novgorod 603950 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.201900607

Reference42 articles.

1. Memristor-The missing circuit element

2. Memristive devices and systems

3. Φ memristor: Real memristor found

4. The future of electronics based on memristive systems

5. Resistive Switching

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5. Structure, Morphology, Chemical Composition, and Optical Properties of Annealed Multilayer Ge/Al2O3 and Si/Ge/Si/Al2O3 Nanoperiodic Systems;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-12

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