Supplementary Study on Buried Oxide Characterization:A Macroscopic Physical Model and Capacitance Response of the Buried Oxide Having a Transition Layer in a SIMOX Substrate-Reference-Cited by-同舟云学术

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Supplementary Study on Buried Oxide Characterization:A Macroscopic Physical Model and Capacitance Response of the Buried Oxide Having a Transition Layer in a SIMOX Substrate

Published:2013-08-30 Issue: Volume: Page:89-102
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John Wiley & Sons Singapore Pte. Ltd.

Reference10 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon;Izumi;Electronics Letters,1978

2. Izumi , K. Omura , Y. Sakai , T. 1982 Digest Technical Papers, International Symposium on VLSI Technology 10 11

3. Omura , Y. Nakashima , S. Izumi , K. 1985 Digest Technical Papers, International Symposium on VLSI Technology 24 25

4. Electronic properties of semi-insulating polycrystalline-silicon (SIPOS) doped with oxygen atoms;Hamasaki;Solid State Communications,1977

5. Microstructure of silicon implanted with high dose oxygen ions;Jaussaud;Applied Physics Letters,1985

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