Properties of Fram Capacitors with Oxide Electrodes-Reference-Cited by-同舟云学术

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Properties of Fram Capacitors with Oxide Electrodes

Published:2012-04-25 Issue: Volume: Page:311-317
ISSN:2637-4390
Container-title:Ceramic Transactions Series
language:
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Author:

Niwa Koichi,Cross Jeffrey S.,Tsukada Mineharu,Kurihara Kazuaki,Kamehara Nobuo

Publisher

John Wiley & Sons, Inc.

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118408186.ch28/fullpdf

Reference17 articles.

1. Fujitsu Electronic devices homepage http://www.fma.fujitsu.com/fram/

2. Preparation of Pb(Zr, Ti)O3 Thin Films on Ir and IrO2 Electrodes;Nakamura;Jap. J. Appl Phys,1994

3. Evaluation of PZT capacitors with Pt/SrRuO3 Electrodes for FRAM;Cross;Integ. Ferroelect,1999

4. Fatigue Properties of (100)/(001) and (111) Oriented Pb(Zr, Ti)O3 Thin Film Capacitors;Tsukada;Jpn. J. Appl. Phys,2002

5. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films I. Theory;Speck;J. Appl. Phys,1994

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