Impact of light-induced recombination centres on the current-voltage characteristic of czochralski silicon solar cells

Author:

Schmidt Jan,Cuevas Andr�s,Rein Stefan,Glunz Stefan W.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Investigation of photon and thermal induced changes in silicon solar cells. Proceedings of the 10th IEEE Photovoltaic Specialists Conference, Palo Alto, CA, 1973; 404-411.

2. Investigation of carrier lifetime instabilities in Cz-grown silicon. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, 1997; 13-18.

3. On the degradation of Cz-silicon solar cells. Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, 1998; 1343-1346.

4. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

5. Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application

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