Affiliation:
1. School of Materials and Chemistry University of Shanghai for Science and Technology Shanghai 200093 China
2. CAS Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 201899 China
3. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
Abstract
Low working voltage‐driven ZnO‐based varistor ceramics play an important role in the multilayer chip varistors, which require a low sintering temperature of ZnO varistor for its low energy consumption. Herein, a remarkable reduction of the sintering temperature from the usual 1100–1300 °C to 950 °C is successfully achieves in the ZnO ceramics via a certain 0.05 mol% of Cr2O3 dopants. The underlying mechanism is found to be involved with the formation of basal‐plane inversion boundaries between the ZnO grains, which can promote the rapid grain growth within the ceramics. Furthermore, the ZnO varistors with 0.05 mol% Cr2O3 dopant exhibit excellent performance. A low breakdown voltage of 416 V mm−1, a high nonlinear coefficient of 39, and a low leakage current of 3.4 μA are obtained simultaneously. This work presents an effective and promising approach for the cost‐efficient preparation of high‐performance ZnO‐based varistors, which have particular significance for the application of multilayer chip varistors with low working voltage.
Funder
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Natural Science Foundation of Shanghai Municipality