Study of Migration Behavior and Optical Properties of Self‐Trapped Hole by Hydrogen Vacancy in KH2PO4 Crystal

Author:

Jiang Jinsong1,Hong Wei2,Liu Tingyu1ORCID,Song Wenqi1,Yang Liying1

Affiliation:

1. College of Science University of Shanghai for Science and Technology 516 Jungong Road Shanghai 200093 China

2. Science and Technology on Plasma Physics Laboratory Research Center of Laser Fusion CAEP Mianyang 621900 China

Abstract

The behavior of self‐trapped holes (STH) adjacent to a H vacancy in K (KDP) crystals is investigated using the DFT + U and hybrid density functional calculations. The calculated results reveal that STH is located on one O atom near and introduces new defect energy levels in the bandgap. The hole tends to be self‐trapped and is more stable at room temperature along with partial lattice distortions. The STH in KDP crystals has a large migration barrier energy, implying a small mobility rate. The optical properties associated with STH are calculated and the emission peak is predicted to be 2.55 eV (487 nm) and the absorption peak to be 4.58 eV (271 nm), which is in good agreement with the experimental results.

Publisher

Wiley

Reference36 articles.

1. Laser-induced damage mechanisms and improvement of optical qualities of bulk potassium dihydrogen phosphate crystals

2. R. A.Hawley‐Fedder P.Geraghty S. N.Locke M. S.McBurney M. J.Runkel T. I.Suratwala S. L.Thompson P. J.Wegner P. K.Whitman inOptical Engineering at the Lawrence Livermore National Laboratory II: The National Ignition Facility SPIE San Jose CA2004 5341 121–126.

3. Hydrogen atoms inKH2PO4crystals

4. Study on optical performance and 532 nm laser damage of rapidly grown KDP crystals

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3