Silver‐Doped Cu2(Sn,Ge)S3 Solar Cells

Author:

Ito Tomohiro1,Nishimura Takahito2ORCID,Chantana Jakapan13,Mavlonov Abdurashid4,Kawano Yu1,Negami Takayuki3,Minemoto Takashi1

Affiliation:

1. Department of Electrical and Electronic Engineering Ritsumeikan University 1-1-1 Nojihigashi Kusatsu Shiga 525-8577 Japan

2. Department of Electrical and Electronic Engineering Tokyo Institute of Technology 2-12-1 Ookayama Meguro-ku Tokyo 152-8550 Japan

3. Research Organization of Science and Technology Ritsumeikan University 1-1-1 Nojihigashi Kusatsu Shiga 525-8577 Japan

4. Ritsumeikan Global Innovation Research Organization Ritsumeikan University 1-1-1 Nojihigashi Kusatsu Shiga 525-8577 Japan

Abstract

Herein, the usefulness of silver (Ag)‐doping into Cu2(Sn,Ge)S3 (CTGS) solar cells is demonstrated. From an observation via a field emission scanning electron microscope, grain growth promotion of the CTGS thin films by Ag‐doping is revealed. It is found that undesirable defects are suppressed by an adequate Ag‐dopant amount, resulting in reduced nonradiative recombination in photoluminescence spectra for the Ag‐doped CTGS films. For the CTGS solar cell devices, Ag‐doping into the CTGS absorbers mainly improves the short‐circuit current density and open‐circuit voltage. Finally, 3.2%‐efficient Ag‐doped CTGS solar cell is obtained at [Ag]/([Ag] + [Cu]) ratio of 0.05. It is believed that these findings will help to realize the highest efficiency for the CTGS solar cells.

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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