Temporal Resistance Drift in the Amorphous States of GST Phase‐Change Semiconductors: An Intrinsic Phenomenon in Nonequilibrium Systems
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering National University of Timor Lorosa'e Rua Formosa 10 Dili East Timor
2. Department of Electrical and Electronic Engineering Gifu University Gifu 501-3122 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100472
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1. Phase-change materials for rewriteable data storage
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5. Terahertz and direct current losses and the origin of non-Drude terahertz conductivity in the crystalline states of phase change materials
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