Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications-Reference-Cited by-同舟云学术

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

Published:2021-09-15 Issue:11 Volume:15 Page:2100363
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Liu Shangfeng¹,Hoo Jason²,Chen Zhaoying¹,Yan Long²,Wang Tao³,Sheng Shanshan¹,Sun Xiaoxiao¹,Yuan Ye⁴,Guo Shiping²,Wang Xinqiang¹⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE) Peking University Beijing 100871 China

2. MOCVD Department Advanced Micro-Fabrication Equipment Inc. Shanghai 201201 China

3. Electron Microscopy Laboratory School of Physics Peking University Beijing 100871 China

4. Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

5. Dongguan Institute of Optoelectronics Peking University Dongguan Guangdong 523808 China

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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