Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films-Reference-Cited by-同舟云学术

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Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

Published:2022-03 Issue:5 Volume:16 Page:2100655
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Gu Hong-Jian¹,Li Zhen-Hai¹,Li Run-Xia¹,Li Jian-Chang¹^ORCID

Affiliation:

1. Vacuum and fluid engineering research center School of Mechanical Engineering & Automation Northeastern University Shenyang 110819 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100655

Reference35 articles.

1. Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

2. Bending effect on the resistive switching behavior of a NiO/TiO2 p–n heterojunction

3. Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

4. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Binary metal oxide-based resistive switching memory devices: A status review;Materials Today Communications;2023-03

2. Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO ₂ Resistive Switching Materials;physica status solidi (b);2022-05-31

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