Implementation of Logic Function and Memristive Behavior in Synthetic Antiferromagnet with Strong Immunity to Perpendicular Magnetic Field Interference

Abstract

Spintronic devices with heavy metal/ferromagnet structures have shown potential applications for in‐memory computing. However, the sensitivity of ferromagnet to external magnetic field raises a challenge for the practical applications of these devices. The usage of synthetic antiferromagnet (SAF) can effectively address this issue due to its good magnetic field immunity. This work demonstrates the implementation of all 16 types of Boolean logic functions via controlling the magnetization states of the SAF layer by using current pulses, and also the stable multistate storage under the interference of perpendicular magnetic field in these devices. The SAF devices also exhibit synaptic plasticity under the stimulation of current pulses. The artificial neural network constructed based on the SAF device can perform handwritten digit recognition tasks with an accuracy rate of 90%. These results showcase the viability and superiority of the SAF device in building logic‐in‐memory architecture for its strong immunity to magnetic field interference.