Reliable Resistive Switching and Synaptic Behaviors Based on a TiO x ‐Doped N Memristor for Information Storage and Neuromorphic Computing
Author:
Affiliation:
1. College of Science Shenyang Aerospace University Shenyang 110136 China
2. College of Information Engineering Jimei University Xiamen 361021 China
3. College of Physical Science and Technology Bohai University 19 Keji Road Jinzhou 121013 China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Liaoning Province
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100255
Reference58 articles.
1. Artificial Synapse Emulated by Charge Trapping-Based Resistive Switching Device
2. A self-powered artificial retina perception system for image preprocessing based on photovoltaic devices and memristive arrays
3. All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
4. Novel circuit designs of memristor synapse and neuron
5. Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition
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1. Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory;Journal of Electronic Materials;2024-02-01
2. Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing;ACS Materials Letters;2023-10-23
3. Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device;Applied Physics A;2022-12-21
4. Mechanism and Conductance Range Enhancement of TiN/AlO x /AlO y /ITO Synaptic Devices;physica status solidi (RRL) – Rapid Research Letters;2022-08-09
5. Reliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structure for neuromorphic systems;Semiconductor Science and Technology;2022-01-31
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