Analysis of Light‐Emission Polarization Ratio in Deep‐Ultraviolet Light‐Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method-Reference-Cited by-同舟云学术

Analysis of Light‐Emission Polarization Ratio in Deep‐Ultraviolet Light‐Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method

Published:2021-11-14 Issue:2 Volume:16 Page:2100498
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Shen Huan-Ting¹,Chang Yu-Chieh¹,Wu Yuh-Renn¹²^ORCID

Affiliation:

1. Graduate Institute of Photonic and Optoelectronics and Department of Electrical Engineering National Taiwan University Taipei 10617 Taiwan

2. Electronic and Optoelectronic System Research Laboratories Industrial Technology Research Institute Hsinchu 31040 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100498

Reference41 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

3. Microorganisms inactivation by continuous and pulsed irradiation of ultraviolet light-emitting diodes (UV-LEDs)

4. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

5. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

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