An empirical nonlinear RF model for CMOS fet suitable for modeling the breakdown region-Reference-Cited by-同舟云学术

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An empirical nonlinear RF model for CMOS fet suitable for modeling the breakdown region

Published:2017-01-26 Issue:3 Volume:59 Page:563-567
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Hernández-Díaz I.¹,Saavedra-Gómez H.J.¹,Loo-Yau J.R.¹,Reynoso Hernández J.A.²,Moreno P.¹

Affiliation:

1. Centro de Investigación y Estudios Avanzados del I. P. N. Unidad Guadalajara; Av. Científica 1145, Colonia El Bajío Zapopan Jalisco C. P. 45015 México

2. Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE); Ensenada Baja California 22860 México

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Y.S. Chauhan S. Venugopalan M.A. Karim S. Khandelwal N. Paydavosi P. Thakur A.M. Niknejad C.C. Hu 2012 46 49

2. M.T. Yang P.C.O. Patricia C.K. Lin T.J. Yeh Y.J. Wang S.P. Voinigescu M. Tazlauanu Y.T. Chia K.L. Young 2004 1049 1052

3. A. Grebennikova F. Lin 2000 1158 1162

4. Empirical nonlinear modeling for RF MOSFETs;Lee;Int J RF Microw Comp Aid Eng,2004

5. A new empirical model for HEMT and MESFET devices;Angelov;IEEE Trans Microw Theory Tech,1992

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