Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Author:

Jarndal Anwar,Aflaki Pouya,Negra Renato,Kouki Ammar B.,Ghannouchi Fadhel M.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference20 articles.

1. AlGaN/GaN HEMTs-An overview of device operation and applications;Mishra;Proc IEEE,2002

2. Power amplifiers and transmitters for RF and microwave;Raab;IEEE Trans Microwave Theory Tech,2002

3. Class E, a new class of high efficiency tuned single-ended switching power amplifiers;Sokal;IEEE J Solid-State Circuits,1975

4. Switch-based GaN HEMT model suitable for highly-efficient RF power amplifier design;Negra;IEEE MTT-S Int. Microwave Symposium Digest,2007

5. A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC;Lee;IEEE Trans Microwave Theory Tech,2004

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2. An Improved Nonlinear I‐V Model for GaN HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2024-01

3. On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression;IET Microwaves, Antennas & Propagation;2021-04-09

4. Inverse Class-F;Switchmode RF and Microwave Power Amplifiers;2021

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