High isolation microstrip GaN-HEMT Single-FET Switch-Reference-Cited by-同舟云学术

High isolation microstrip GaN-HEMT Single-FET Switch

Published:2010-05-06 Issue:4 Volume:20 Page:391-398
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Ciccognani Walter,Ferrari Mauro,Limiti Ernesto

Funder

Claudio Lanzieri, Marco Peroni and Paolo Romanini

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference13 articles.

1. A.M. Street 2000 4/1 4/7

2. V. Alleva A. Bettidi A. Cetronio M. De Dominicis M. Ferrari E. Giovine C. Lanzieri E. Limiti A. Megna M. Peroni P. Romaninf 2008 194 197

4. A. Bettidi A. Cetronio M. De Dominicis G. Giolo C. Lanzieri A. Manna M. Peroni C. Proietti P. Romanini 2008 329 332

5. High power algan/gan ku-band mmic spdt switch and design consideration, Microwave Symposium Digest;Ma;2008 IEEE MTT-S International,2008

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. GaN based High Power SPDT Switch for Single Chip X-Band T/R Module Front-End;2021 1st International Conference on Microwave, Antennas & Circuits (ICMAC);2021-12-21

3. Robust LNA in GaN Technology;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-09-15

4. GaN-Based Robust Low-Noise Amplifiers;IEEE Transactions on Electron Devices;2013-10