MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2-Reference-Cited by-同舟云学术

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MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

Published:2002-12-03 Issue:6 Volume:8 Page:273-276
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:
Short-container-title:Chem. Vap. Deposition

Author:

Joo O.-S.,Jung K.-D.,Cho S.-H.,Kyoung J.-H.,Ahn C.-K.,Choi S.-C.,Dong Y.,Yun H.,Han S.-H.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural studies of main group organometallic single-source precursors for MOCVD;Nanomaterials via Single-Source Precursors;2022

2. Aluminum/Nitrogen Cycles and an Open Cage with Al-H and N-H Functions;Zeitschrift für anorganische und allgemeine Chemie;2017-10-09

3. An Investigation of the Symmetric and Asymmetric Cleavage Products in the System Aluminum Trihalide/1-Butylimidazole;Chemistry - A European Journal;2017-07-31

4. Structural and thermodynamic properties of molecular complexes of aluminum and gallium trihalides with bifunctional donor pyrazine: decisive role of Lewis acidity in 1D polymer formation;Dalton Transactions;2013

5. Molecular complexes formed by halides of group 4,5,13–15 elements and the thermodynamic characteristics of their vaporization and dissociation found by the static tensimetric method;Coordination Chemistry Reviews;2010-09

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