Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Author:

Paduthol A.1ORCID,Juhl M.K.1,Nogay G.2,Löper P.2,Trupke T.1

Affiliation:

1. University of New South Wales; Sydney New South Wales 2052 Australia

2. Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronic Laboratory (PV-LAB); École Polytechnique Fédérale de Lausanne (EPFL); Rue de la Maladière 71b Neuchâtel 2002 Switzerland

Funder

Swiss Federal Office for Energy (SFOE)

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Australian Renewable Energy Agency

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Passivation properties of amorphous and microcrystalline silicon layers deposited by VHF-GD for crystalline silicon solar cells;Keppner;Sol Energy Mater Sol Cells,1994

2. Dauwe S Schmidt J Hezel R Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films , 2002 1246 1249

3. Dauwe S Mittelstadt L Metz A Schmidt J Hezel R Low-temperature rear surface passivation schemes for >20% efficient silicon solar cells 3rd World Conference on Photovoltaic Energy Conversion 2003

4. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition;Schüttauf;Appl Phys Lett,2011

5. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology;Yoshikawa;Sol Energy Mater Sol Cells,2017

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