Electrochemical polymerization of poly(aniline-o-anisidine) and its anticorrosion properties

Author:

Turlygaziyeva AidanaORCID,Rakhymbay GulmiraORCID,Bakhytzhan YeldanaORCID,Argimbayeva AkmaralORCID,Burkitbayeva BibisaraORCID

Abstract

A synthesis of bismuth selenide with a thickness of 3-4 nm on the surface of mica taken as a matrix was investigated using the gas-solid mechanism. Since discovery of two-dimensional atomic crystals of graphene in 2004, scientists have grown interested in exploring methods for synthesis of two-dimensional atomic crystal nanofilms. Among them, of particular interest are sulfides and transition metal selenides, such as molybdenum sulfide, tungsten selenide, bismuth selenide. Bismuth selenide possesses special thermoelectric, photoelectric properties, therefore there are wide possibilities for its use in such areas as thermoelectric devices, photosensitive elements, optical information keepers, etc. In this connection, there are many studies on the search for optimal methods for the synthesis of bismuth selenide. Each of the proposed methods has its own advantages and disadvantages. In the article, a variety of the recently used gas-liquid-solid mechanism (V-L-S) is used as a method for the synthesis of bismuth selenide. When using amorphous silicon dioxide as a matrix, the synthesized bismuth selenide is not uniform, and the synthesis process is uncontrollable. Therefore, in the work fluorinated gold mica was used as a matrix. The effect of temperature, gas feed rate on the size, shape and thickness of the film was investigated.

Publisher

Center of Physical Chemical Methods of Research and Analysis

Subject

General Medicine

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3