Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
Author:
Affiliation:
1. Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road Keelung 202, Taiwan
Funder
National Science Council
Publisher
Hindawi Limited
Subject
General Engineering,General Materials Science
Link
http://downloads.hindawi.com/journals/amse/2012/654762.pdf
Reference16 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors
3. Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors
4. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
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