Developments of Interfacial Measurement Using Cavity Scanning Microwave Microscopy

Author:

Zhang Zhenrong123ORCID,Wen Huanfei123ORCID,Li Liangjie123ORCID,Pei Tao123ORCID,Guo Hao123ORCID,Li Zhonghao123ORCID,Tang Jun123ORCID,Liu Jun123ORCID

Affiliation:

1. Key Laboratory of Instrument Science and Dynamic Testing Ministry of Education, North University of China, Taiyuan 030051, China

2. Key Lab of Quantum Sensing and Precision Measurement, Shanxi Province, Taiyuan 030051, China

3. Institute of Instrument and Electronics, North University of China, Taiyuan 030051, China

Abstract

In the field of materials research, scanning microwave microscopy imaging has already become a vital research tool due to its high sensitivity and nondestructive testing of samples. In this article, we review the main theoretical and fundamental components of microwave imaging, in addition to the wide range of applications of microwave imaging. Rather than the indirect determination of material properties by measuring dielectric constants and conductivity, microwave microscopy now permits the direct investigation of semiconductor devices, electromagnetic fields, and ferroelectric domains. This paper reviews recent advances in scanning microwave microscopy in the areas of resolution and operating frequency and presents a discussion of possible future industrial and academic applications.

Funder

Shanxi “1331 Project”

Publisher

Hindawi Limited

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

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