Nonstoichiometry inTiO2−yStudied by Ion Beam Methods and Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Nonstoichiometry inTiO2−yStudied by Ion Beam Methods and Photoelectron Spectroscopy

Published:2012 Issue: Volume:2012 Page:1-13
ISSN:1687-8434
Container-title:Advances in Materials Science and Engineering
language:en
Short-container-title:Advances in Materials Science and Engineering

Author:

Zakrzewska K.¹

Affiliation:

1. Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, AGH University of Science and Technology, 30 Mickiewicza Avenue, 30-059 Kraków, Poland

Abstract

This paper treats a problem of nonstoichiometry inTiO2−ythin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometryyin the bulk and at the surface ofTiO2−ylayers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutileTiO2is discussed.

Funder

Polish Ministry of Science and Higher Education

Publisher

Hindawi Limited

Subject

General Engineering,General Materials Science

Link

http://downloads.hindawi.com/journals/amse/2012/826873.pdf

Reference77 articles.

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