Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

Author:

Peng Fei12,Qin Shuang-Jiao2,Zhao Yu2,Pan Ge-Bo2

Affiliation:

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Abstract

The electrochemical deposition of zinc on single-crystaln-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of −1.12 V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132 mA cm−2was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10 mM ZnSO4+ 0.5 M Na2SO4+ 0.5 M H3BO3(pH = 4).

Funder

National Natural Science Foundation of China

Publisher

Hindawi Limited

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