Affiliation:
1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
Abstract
We present numerical simulations for the design of gated few-electron quantum dot structures
in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed
surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces.
In our simulations, the confining potential is obtained from the Poisson equation with a
Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in
the few-electron regime.
Funder
Defense Advanced Research Projects Agency
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献