Electronic and Thermal Transport Properties of Complex Structured Cu-Bi-Se Thermoelectric Compound with Low Lattice Thermal Conductivity

Author:

Hwang Jae-Yeol1ORCID,Mun Hyeona2,Cho Jung Young3,Yang Sang Sun4,Lee Kyu Hyoung3ORCID,Kim Sung Wng12

Affiliation:

1. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejeon 305-701, Republic of Korea

2. Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea

3. Materials R&D Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712, Republic of Korea

4. Powder and Ceramics Division, Powder Technology Department, Korea Institute of Materials Science, Changwon 642-831, Republic of Korea

Abstract

Monoclinic Cux+yBi5−ySe8structure has multiple disorders, such as randomly distributed substitutional and interstitial disorders by Cu as well as asymmetrical disorders by Se. Herein, we report the correlation of electronic and thermal properties with the structural complexities of Cux+yBi5−ySe8. It is found that the interstitial Cu site plays an important role not only to increase the electrical conductivity due to the generation of electron carriers but also to reduce the thermal conductivity mainly due to the phonon scattering by mass fluctuation. With impurity doping at the interstitial Cu site, an extremely low lattice thermal conductivity of 0.32 W·m−1·K−1was achieved at 560 K. These synergetic effects result in the enhanced dimensionless figure of merit (ZT).

Funder

Institute for Basic Science (IBS) in Korea

Publisher

Hindawi Limited

Subject

General Materials Science

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