Low Temperature Dielectric Relaxation in Ba1−xBixTi1−xFexO3 System

Author:

Kumar Arvind1,Dwivedi R. K.1,Baboo S.2,Parkash Om3

Affiliation:

1. Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307, India

2. Department of Applied Science, Devender Singh Institute of Technology and Management, Ghaziabad 201001, India

3. Department of Ceramic Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221 005, India

Abstract

We report on dielectric properties of polycrystalline Ba1xBixTi1xFexO3 (BBTF) ceramic system (x=0.02, 0.06, 0.08, 0.10, 0.12, and 0.16). The materials were synthesized by solid state ceramic route. Solid solution formation has been confirmed by powder X-ray diffraction for compositions with x0.16. Crystal structure is tetragonal for x0.08 and cubic for x0.10. Microstructures show that the average grain size is less than one micrometer (1 μ). Dielectric behavior has been studied as a function of temperature (100 K–400 K) and frequency. Composition with x=0.02 exhibits diffuse phase transition. Compositions with x0.10 show ferroelectric relaxor behavior. This shows that diffuse ferroelectric transition behavior changes to relaxor type ferroelectric transition with increasing x. Plots of dielectric loss (D) versus temperature shows broad maxima which shift to high temperature with increasing frequency, dispersion in dielectric loss decreases with x below peak maxima and increases above. It may be attributed to Maxwell Wagner type relaxation process for low x (~0.02) and relaxation of nanopolar regions for x=0.16.

Funder

Department of Science and Technology, Government of India

Publisher

Hindawi Limited

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