A 12 dB 0.7 V W CMOS LNA for 866 MHz UHF RFID Reader

Abstract

The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite    effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum noise matching at a very low power drain of 850  from a 0.7 V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain () of , a reverse isolation () of , an output power reflection ( @866 MHz) of , and an input power reflection ( @866 MHz) of . It had a minimum pass-band of around 2.2 dB and a third-order input referred intercept point (IIP3) of .