Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Author:

Bansal Deepak12ORCID,Bajpai Anuroop1ORCID,Kumar Prem1ORCID,Kaur Maninder1,Rangra Kamljit12

Affiliation:

1. Central Electronics Engineering Research Institute (CEERI), Council of Scientific and Industrial Research (CSIR), Pilani, Rajasthan 333031, India

2. Academy of Scientific and Innovative Research (AcSIR), New Delhi, India

Abstract

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Funder

Council of Scientific and Industrial Research

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,General Computer Science,Signal Processing

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