Affiliation:
1. Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700 032, India
2. UGC-DAE CSR, Kalpakkam Node, Kokilamedu 603104, India
Abstract
Diamond-like carbon films were electrodeposited on n-Si substrate to realize an n-Si/DLC PV structure. The films thus obtained were characterized by FESEM, XPS, FTIR, and Raman studies. Solar cell characteristics were also investigated critically. Maximum efficiency of 3.7% was obtained for the best n-Si(100)/DLC structure. Carrier life time was obtained from Voc decay measurement. It was observed that photoinduced charge separation in n-Si(100)/DLC structure was associated with an increase in the dielectric constant and a decrease in the device resistance. The process, being reproducible, cheap, and scalable, involving significantly less process steps, is likely to usher a new hope to the current competitive scenario of PV technology.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献