Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

Author:

Hernández-Torres J.1,Gutierrez-Franco A.1,González P. G.2,García-González L.1,Hernandez-Quiroz T.1,Zamora-Peredo L.1,Méndez-García V. H.3,Cisneros-de la Rosa A.3

Affiliation:

1. Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, 94292 Boca del Río, VER, Mexico

2. CONACYT Research Fellow-Centro de Ingeniería y Desarrollo Industrial, 76125 Querétaro, QRO, Mexico

3. Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología, Universidad Autónoma de San Luis Potosí, 78210 San Luis Potosí, SLP, Mexico

Abstract

Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated withCNxfilms located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominantDband.ID/IGratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3ratio due to presence of high nitrogen content.

Funder

FOMIX-Veracruz

Publisher

Hindawi Limited

Subject

Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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