Amorphization Effect for Kondo Semiconductor CeRu2Al10

Abstract

We measured the magnetic susceptibility χ, electrical resistivity ρ, and specific heat Cp of a sputtered amorphous (a-)CeRu2Al10 alloy. χ value for a-CeRu2Al10 alloy follows a Curie-Weiss paramagnetic behavior in the high-temperature region, and magnetic transition was not observed down to 2 K. The effective paramagnetic moment peff is 1.19 μB/Ce-atom. The resistivity shows a typical disordered alloy behavior, that is, small temperature dependence for the whole temperature range. We observed an enhancement of ρ and Cp/T in the low-temperature region of T<10 K. The enhancement in ρ is suppressed by applying a magnetic field. It is suggested that this behavior is caused by the Kondo effect.