Photoelectrochemical Characterization of Sprayedα-Fe2O3Thin Films: Influence of Si Doping andSnO2Interfacial Layer-Reference-Cited by-同舟云学术

Photoelectrochemical Characterization of Sprayedα-Fe2O3Thin Films: Influence of Si Doping andSnO2Interfacial Layer

Published:2008 Issue: Volume:2008 Page:1-7
ISSN:1110-662X
Container-title:International Journal of Photoenergy
language:en
Short-container-title:International Journal of Photoenergy

Author:

Liang Yongqi¹,Enache Cristina S.¹,van de Krol Roel¹

Affiliation:

1. Department DelftChemTech/Materials for Energy Conversion and Storage, Faculty of Applied Sciences, Delft University of Technology, P.O. Box 5045, 2600 GA Delft, The Netherlands

Abstract

α-Fe2O3thin film photoanodes for solar water splitting were prepared by spray pyrolysis ofFe(AcAc)3. The donor density in theFe2O3films could be tuned between1017–1020 cm-3by doping with silicon. By depositing a 5 nmSnO2interfacial layer between theFe2O3films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of theSnO2interfacial layer were systematically studied. The highest photoresponse is obtained forFe2O3doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2at 1.23 VRHEin a 1.0 M KOH solution under 80 mW/cm2AM1.5 illumination.

Funder

Netherlands Organization for Scientific Research

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

Link

http://downloads.hindawi.com/journals/ijp/2008/739864.pdf

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