SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Author:
Affiliation:
1. Department of Applied Physics, Faculty of Sciences and Technologies Cadi Ayyad University, Marrakech, Morocco
2. University Hassan II Ain Chock, Higher School of Technology, Casablanca, Morocco
Abstract
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,General Computer Science,Signal Processing
Link
http://downloads.hindawi.com/journals/jece/2021/6665384.pdf
Reference24 articles.
1. A new analytical IGBT model with improved electrical characteristics;K. Sheng;IEEE Transactions on Power Electronics,1999
2. Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
3. Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)
4. An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
5. An experimentally verified IGBT model implemented in the Saber circuit simulator;A. R. Hefner
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