The Observation of Electrical Hysteric Behavior in Synthesized V2O5Nanoplates by Recrystallization

Author:

Kim Chang-Hee12,Yun Yong Ju1,Kim Byung Hoon3,Hong Won G.1,Kim Yark Yeon1,Jang Won lck1,Lee Nae-Eung2,Yu Han Young1ORCID

Affiliation:

1. Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-Dong, Yuseong-gu, Daejeon 305-700, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-gu, Suwon, Kyunggi-do 440-746, Republic of Korea

3. Department of Physics, Incheon National University, Incheon 406-772, Republic of Korea

Abstract

The anomalous electrical conductance for the V2O5foam synthesized via a foaming process was measured. In the annealing process, the synthesized V2O5foam is recrystallized with the increase of annealing temperature. The recrystallization procedure was characterized by using physical analysis tools such as thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffractometer. In the electrical analysis technique of current-voltage characteristics as a function of annealing temperature, an anomalous hysteric behavior appears at the annealing temperature of 400°C. We conclude that the recrystallization of V2O5nanoplates results in the anomalous behavior in voltage-dependent current characteristics.

Funder

Ministry of Trade, Industry and Energy

Publisher

Hindawi Limited

Subject

General Materials Science

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