The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions-Reference-Cited by-同舟云学术

The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

Published:2012 Issue: Volume:2012 Page:1-4
ISSN:0882-7516
Container-title:Active and Passive Electronic Components
language:en
Short-container-title:Active and Passive Electronic Components

Author:

Yang Yi-Lin¹,Zhang Wenqi²,Cheng Chi-Yun²,Yeh Wen-kuan²

Affiliation:

1. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan

2. Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 824, Taiwan

Abstract

The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.

Funder

National Science Council

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://downloads.hindawi.com/journals/apec/2012/872494.pdf

Reference6 articles.

1. Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- $k$/Metal Gate Stack Device Reliability and Performance Enhancement

2. Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films

3. Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach

4. Rapid thermal post-metallization annealing effect on thin gate oxides

5. Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

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