Investigating the Influence of Bath Temperature on the Chemical Bath Deposition of Nanosynthesized Lead Selenide Thin Films for Photovoltaic Application

Author:

Abel Saka1ORCID,Tesfaye Jule Leta12,Gudata Lamessa1,Lamessa Fekede1,Shanmugam Ramaswamy3,Dwarampudi L. Priyanka4,Nagaprasad N.5ORCID,Krishnaraj Ramaswamy26ORCID

Affiliation:

1. Department of Physics, College of Natural and Computational Science, Dambi Dollo University, Ethiopia

2. Centre for Excellence-Indigenous Knowledge, Innovative Technology Transfer and Entrepreneurship, Dambi Dollo University, Ethiopia

3. TIFAC, CORE-HD, JSS College of Pharmacy, JSS Academy of Higher Education & Research, Ooty, Nilgiris, Tamil Nadu, India

4. Department of Pharmacognosy, JSS College of Pharmacy, JSS Academy of Higher Education & Research, Ooty, Nilgiris, Tamil Nadu, India

5. Department of Mechanical Engineering, ULTRA College of Engineering and Technology, Madurai, 625104 Tamilnadu, India

6. Department of Mechanical Engineering, College of Engineering and Technology, Dambi Dollo University, Ethiopia

Abstract

Thin films of CBD are formed on metal surfaces from an aqueous solution containing Pb(NO3)2 and Na2O4Se. The impact of the bath temperature upon lead selenide NPs is analyzed. The evaluation of X-ray diffraction demonstrates that the produced NPs were polycrystalline with (111) orientation. The morphological analysis of the surface shows that the grains are spherical gemstones. As the bath temperature was raised from 20 to 85 degrees Celsius, the energy bandgap decreased from 2.4 to 1.2 eV, indicating a reduction in the band gap. Micron-sized nanoparticles produced at 85 degrees Celsius exhibited the best crystallinity and were uniformly spread across the surface of the substrate with excellent particle sizes. If the solution bath temperature increases from 20°C to 85°C, the average strength of PL decreases. The maximum photoluminescence strength is predominantly because of self-trapped exciton recombination, formed from O2 vacancy and particle size called defect centers, for the deposited thin films at 45°C and 85°C. The photoluminescence intensity rises sequentially with all temperatures. Therefore, the finest solution temperature is 85 degrees Celsius.

Publisher

Hindawi Limited

Subject

General Materials Science

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