Abstract
This study aims to improve the triggering current and dynamic characteristics of thyristor chips by designing new gate structures and multilayer semiconductor structures. Thyristor chips are essential components in power electronic devices, widely used in fields such as power transmission, motor control, and energy conversion systems. Trigger current is a key factor in the performance of thyristor chips, which is responsible for initiating the conduction state of the thyristor and carrying high current under high voltage conditions. This study improved the triggering current and dynamic characteristics of thyristor chips by optimizing the chip structure, especially by introducing multilayer P/N semiconductor design and improving the gate structure. The research results provide important guidance for the future development of thyristor chips and also contribute to the advancement of semiconductor technology.
Funder
Education Department of Jilin Province