Recent Progress in Ohmic/Schottky-Contacted ZnO Nanowire Sensors

Abstract

We review the recent progress of zinc oxide (ZnO) nanowire sensors with ohmic-contacted and Schottky-contacted configurations and the enhancement of the performances of Schottky-contacted ZnO NW sensors (SCZNSs) by the piezotronic effect. Comparing with the traditional ohmic-contacted ZnO NW sensors (OCZNSs), the SCZNSs have higher sensitivities and faster responses controlled by the barrier height at the metal-semiconductor (M-S) interface. The piezotronic effect was applied to tune the Schottky barrier height (SBH) with the strain-induced piezoelectric polarization charges at the interface of the M-S contact. The piezotronic effect can thus improve the detection limitation, sensitivity, and response time of the SCZNSs in different applications, such as UV detection, gas and bio/chemical sensing. These piezotronic-enhanced SCZNSs may find potential applications in human-machine interfacing and flexible electronics skin technologies.