A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers
-
Published:1998-01-01
Issue:1-4
Volume:6
Page:53-56
-
ISSN:1065-514X
-
Container-title:VLSI Design
-
language:en
-
Short-container-title:VLSI Design
Author:
Shih W.-K.1,
Jallepalli S.1,
Yeap C.-F.1,
Rashed M.1,
Maziar C. M.1,
Tasch A. F.1
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712, USA
Abstract
Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed.
Excellent agreement between the simulated and experimental transport characteristics
has been observed in the region of strong inversion at both 300K and 77K. The
contribution to the effective mobility due to individual subbands has been analyzed and qualitatively
explained.
Funder
Services Electronics Program
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture