Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers-Reference-Cited by-同舟云学术

Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

Published:2015 Issue: Volume:2015 Page:1-6
ISSN:1687-4110
Container-title:Journal of Nanomaterials
language:en
Short-container-title:Journal of Nanomaterials

Author:

Kang Yangsen¹,Liang Dong²,Mehra Saahil³,Huo Yijie¹,Chen Yusi¹,Christoforo Mark G.¹,Salleo Alberto³,Harris James S.¹³⁴

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

2. Department of Physics, Stanford University, Stanford, CA 94305, USA

3. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA

4. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA

Abstract

We demonstrate a high-throughput, solution-based process for subwavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO) nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs) solar cell. The nanostructured ZnO films have demonstrated antireflection and light scattering properties over the visible/near-infrared (NIR) spectrum. The results show a broadband spectral enhancement of the solar cell external quantum efficiency (EQE), a 16% enhancement of short circuit current, and a 10% increase in photovoltaic efficiency.

Publisher

Hindawi Limited

Subject

General Materials Science

Link

http://downloads.hindawi.com/journals/jnm/2015/263734.pdf

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