Affiliation:
1. Dipartimento di Ingegneria Elettronica, Università degli Studi di Roma Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy
2. Selex Sistemi Integrati, Via Tiburtina 1231, 00131 Rome, Italy
Abstract
A complete design flow starting from the technological process development up to the fabrication of digital circuits is presented. The aim of this work is to demonstrate the GaAs Enhancement/Depletion (E/D) double stop-etch technology implementation feasibility for digital applications, aimed at mixed signal circuit integration. On the basis of the characterization of small E/D devices with different Gate peripheries, developed by the SELEX-SI foundry, and the analysis of several GaAs-based logical families, the most suitable logic for the available technology has been selected. Then, simple test vehicles (level shifters, NOR logic gates and D Flip-Flops) have been designed, realized, and measured to validate the design strategy applied to the GaAs E/D process. These logical circuits are preliminary to the design of a more complex serial-to-parallel converter, to be implemented onto the same chip together with RF analog blocks, such as stepped attenuators and phase shifters.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
9 articles.
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