Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers
Author:
Affiliation:
1. Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany
Abstract
Funder
Deutsche Forschungsgemeinschaft
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://downloads.hindawi.com/archive/2014/293590.pdf
Reference23 articles.
1. Self-injection locking of an extraordinarily wide broad-area diode laser with a 1000-?m-wide emitter
2. 5 W, diffraction-limited, tapered-stripe unstable resonator semiconductor laser
3. Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector
4. Monolithically integrated multiwavelength grating cavity laser
5. Numerical procedure for the lateral-mode analysis of broad-area semiconductor lasers with an external cavity
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