A Monte Carlo study ,of Electron Transport in Strained
Si/SiGe Heterostructures
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Published:1998-01-01
Issue:1-4
Volume:6
Page:213-216
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ISSN:1065-514X
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Container-title:VLSI Design
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language:en
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Short-container-title:VLSI Design
Author:
Rashed Mahbub1,
Shih W.-K.1,
Jallepalli S.1,
Zaman R.1,
Kwan T. J. T.2,
Maziar C. M.1
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, USA
2. Los Alamos National Laboratory, New Mexico, USA
Abstract
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated
using a Monte Carlo (MC) simulation tool. The study includes both electron transport
in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband
analytical model, “fitted bands”, representing the features of a realistic energy bandstructure.
The investigation includes the study of low- and high-field electron transport characteristics
at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS
structure at room temperature. Both calculations show saturation of mobility enhancement in
strained silicon beyond germanium mole fraction of 0.2.
Funder
Services Electronics Program
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture