Analysis of Memreactance with Fractional Kinetics

Author:

Banchuin Rawid1ORCID

Affiliation:

1. Faculty of Engineering and Graduated School of Information Technology, Siam University, Bangkok, Thailand

Abstract

In this work, the analysis of the memreactance, i.e., meminductor and memcapacitor, with fractional-order kinetics has been proposed. The meminductances, memcapacitances, and related parameters due to both DC and periodic input waveforms have been derived. The behavioral analysis has been thoroughly performed with the aid of numerical simulation. The effects of fractional-order kinetics have been explored where both linear and nonlinear dopant drift scenarios have been considered. Moreover, the emulation of memreactance with fractional-order kinetics by using the memristor and the effect of the fractional-order kinetics on the memreactance-based circuits have also been mentioned along with the extension of our results to the fractional-order memreactance.

Publisher

Hindawi Limited

Subject

General Engineering,General Mathematics

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A novel generalized fractional‐order memristor model with fully explicit memory description;International Journal of Circuit Theory and Applications;2022-08-22

2. Analytical model of inverse memelement with fractional order kinetic;International Journal of Circuit Theory and Applications;2022-03-09

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